Copper oxide/N-silicon heterojunction photovoltaic device

Feng, Tom; Ghosh, Amal K

Title: Copper oxide/N-silicon heterojunction photovoltaic device

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Abstract

A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Inventors:

Feng, Tom ^[1]; Ghosh, Amal K ^[2]

Morris Plains, NJ
New Providence, NJ

Issue Date:: 1982-01-01

Research Org.:: EXXON RESEARCH & ENGINEERING

OSTI Identifier:: 864412

Patent Number(s):: 4360702

Assignee:: Exxon Research and Engineering Co. (Florham Park, NJ)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/074 - comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells

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DOE Contract Number:: AC02-79ET23047

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: copper; oxide; n-silicon; heterojunction; photovoltaic; device; characteristics; efficiency; solar; cell; comprising; cu; n-si; layer; formed; heating; deposited; oxygen; containing; ambient; efficiency solar; n-silicon heterojunction; oxygen containing; copper oxide; solar cell; photovoltaic device; cell comprising; heterojunction photovoltaic; copper layer; deposited copper; /136/257/427/438/

Citation Formats


                    Feng, Tom, and Ghosh, Amal K. Copper oxide/N-silicon heterojunction photovoltaic device.  United States: N. p., 1982. 
        Web.

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                    Feng, Tom, & Ghosh, Amal K. Copper oxide/N-silicon heterojunction photovoltaic device.  United States.

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                    Feng, Tom, and Ghosh, Amal K. Fri .  
        "Copper oxide/N-silicon heterojunction photovoltaic device".  United States.  https://www.osti.gov/servlets/purl/864412.

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@article{osti_864412,

  title        = {Copper oxide/N-silicon heterojunction photovoltaic device},

  author       = {Feng, Tom and Ghosh, Amal K},

  abstractNote = {A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1982},

  month        = {1}

}

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