skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of casting silicon into thin sheets

Abstract

Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

Inventors:
 [1];  [2];  [3]
  1. (San Jose, CA)
  2. (Los Altos, CA)
  3. (Tucson, AZ)
Issue Date:
OSTI Identifier:
864371
Patent Number(s):
4356141
Application Number:
06/240,918
Assignee:
SRI International (Menlo Park, CA) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; casting; silicon; sheets; cast; shapes; flat-bottomed; graphite; crucible; providing; melt; molten; relatively; amount; salt; preferably; naf; resulting; forms; spherical; pool; sinks; wetted; conditions; react; form; sic; pressed; desired; thinness; tool; held; mass; cooled; temperatures; below; melting; shape; removed; temperatures below; molten salt; casting silicon; /264/136/

Citation Formats

Sanjurjo, Angel, Rowcliffe, David J., and Bartlett, Robert W. Method of casting silicon into thin sheets. United States: N. p., 1982. Web.
Sanjurjo, Angel, Rowcliffe, David J., & Bartlett, Robert W. Method of casting silicon into thin sheets. United States.
Sanjurjo, Angel, Rowcliffe, David J., and Bartlett, Robert W. Tue . "Method of casting silicon into thin sheets". United States. https://www.osti.gov/servlets/purl/864371.
@article{osti_864371,
title = {Method of casting silicon into thin sheets},
author = {Sanjurjo, Angel and Rowcliffe, David J. and Bartlett, Robert W.},
abstractNote = {Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {10}
}

Patent:

Save / Share: