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Title: Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.
Inventors:
 [1]
  1. (Los Alamos, NM)
Issue Date:
OSTI Identifier:
864334
Assignee:
United States of America as represented by United States (Washington, DC) LANL
Patent Number(s):
US 4349407
Research Org:
Los Alamos National Laboratory (LANL), Los Alamos, NM
Country of Publication:
United States
Language:
English
Subject:
method; forming; single; crystals; beta; silicon; carbide; liquid; lithium; solvent; growing; sic; solution; molten; polycrystalline; feed; material; reasonable; growth; rates; accomplished; temperatures; range; 1330; degree; 1500; growth rate; liquid lithium; molten lithium; feed material; silicon carbide; single crystal; single crystals; beta silicon; growth rates; growing single; sic feed; /117/