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Title: Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

Abstract

A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

Inventors:
 [1]
  1. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
864334
Patent Number(s):
4349407
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; single; crystals; beta; silicon; carbide; liquid; lithium; solvent; growing; sic; solution; molten; polycrystalline; feed; material; reasonable; growth; rates; accomplished; temperatures; range; 1330; degree; 1500; growth rate; liquid lithium; molten lithium; feed material; silicon carbide; single crystal; single crystals; beta silicon; growth rates; growing single; sic feed; /117/

Citation Formats

Lundberg, Lynn B. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent. United States: N. p., 1982. Web.
Lundberg, Lynn B. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent. United States.
Lundberg, Lynn B. Fri . "Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent". United States. https://www.osti.gov/servlets/purl/864334.
@article{osti_864334,
title = {Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent},
author = {Lundberg, Lynn B},
abstractNote = {A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}