Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
Abstract
A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.
- Inventors:
-
- Los Alamos, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 864334
- Patent Number(s):
- 4349407
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; single; crystals; beta; silicon; carbide; liquid; lithium; solvent; growing; sic; solution; molten; polycrystalline; feed; material; reasonable; growth; rates; accomplished; temperatures; range; 1330; degree; 1500; growth rate; liquid lithium; molten lithium; feed material; silicon carbide; single crystal; single crystals; beta silicon; growth rates; growing single; sic feed; /117/
Citation Formats
Lundberg, Lynn B. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent. United States: N. p., 1982.
Web.
Lundberg, Lynn B. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent. United States.
Lundberg, Lynn B. Fri .
"Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent". United States. https://www.osti.gov/servlets/purl/864334.
@article{osti_864334,
title = {Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent},
author = {Lundberg, Lynn B},
abstractNote = {A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1982},
month = {Fri Jan 01 00:00:00 EST 1982}
}
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