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Title: Transparent electrical conducting films by activated reactive evaporation

Abstract

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California, Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
864251
Patent Number(s):
4336277
Application Number:
06/191,407
Assignee:
Regents of University of California (Berkeley, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-79ET23008
Resource Type:
Patent
Resource Relation:
Patent File Date: 1980 Sep 29
Country of Publication:
United States
Language:
English
Subject:
transparent; electrical; conducting; films; activated; reactive; evaporation; process; apparatus; producing; melting; metals; alloys; indium; oxide; doped; produced; physical; vapor; deposition; metal; alloy; vaporized; resistance; heating; vacuum; chamber; oxygen; inert; gas; argon; introduced; ionized; beam; energy; electrons; reaction; zone; heater; substrate; resulting; deposits; film; requiring; post; heat; treatment; transparent electrical; electrical conducting; energy electrons; resistance heating; indium oxide; metal vapor; vacuum chamber; metal oxide; inert gas; reaction zone; vapor deposition; electrical resistance; heat treatment; physical vapor; energy electron; oxide doped; reactive evaporation; vapor resulting; conducting films; evaporation process; conducting film; resistance heat; resistance heater; activated reactive; /427/118/204/

Citation Formats

Bunshah, Rointan, and Nath, Prem. Transparent electrical conducting films by activated reactive evaporation. United States: N. p., 1982. Web.
Bunshah, Rointan, & Nath, Prem. Transparent electrical conducting films by activated reactive evaporation. United States.
Bunshah, Rointan, and Nath, Prem. Fri . "Transparent electrical conducting films by activated reactive evaporation". United States. https://www.osti.gov/servlets/purl/864251.
@article{osti_864251,
title = {Transparent electrical conducting films by activated reactive evaporation},
author = {Bunshah, Rointan and Nath, Prem},
abstractNote = {Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}