Hydrogen permeation resistant barrier

Title: Hydrogen permeation resistant barrier

Full Record
Other Related Research

Abstract

A hydrogen permeation resistant barrier is formed by diffusing aluminum into an iron or nickel alloy and forming an intermetallic aluminide layer.

Inventors:

McGuire, Joseph C ^[1]; Brehm, William F ^[1]

Richland, WA

Issue Date:: 1982-01-01

Research Org.:: Hanford Engineering Development Lab., Richland, WA (United States)

OSTI Identifier:: 864127

Patent Number(s):: 4314880

Assignee:: United States Department of America as represented by United (Washington, DC)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

G - PHYSICS G21 - NUCLEAR PHYSICS G21B - FUSION REACTORS

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E30/30 - Nuclear fission reactors
Y02E30/10 - Fusion reactors

G - PHYSICS G21 - NUCLEAR PHYSICS G21B - FUSION REACTORS
G21B1/13 - First wall

G - PHYSICS G21 - NUCLEAR PHYSICS G21C - NUCLEAR REACTORS
G21C3/20 - with coating on fuel or on inside of casing

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C10/00 - Solid state diffusion of only metal elements or silicon into metallic material surfaces

Show less

DOE Contract Number:: EY-76-C-14-2170

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: hydrogen; permeation; resistant; barrier; formed; diffusing; aluminum; iron; nickel; alloy; forming; intermetallic; aluminide; layer; hydrogen permeation; nickel alloy; resistant barrier; permeation resistant; /376/427/976/

Citation Formats


                    McGuire, Joseph C, and Brehm, William F. Hydrogen permeation resistant barrier.  United States: N. p., 1982. 
        Web.

Copy to clipboard


                    McGuire, Joseph C, & Brehm, William F. Hydrogen permeation resistant barrier.  United States.

Copy to clipboard


                    McGuire, Joseph C, and Brehm, William F. Fri .  
        "Hydrogen permeation resistant barrier".  United States.  https://www.osti.gov/servlets/purl/864127.

Copy to clipboard


                    
@article{osti_864127,

  title        = {Hydrogen permeation resistant barrier},

  author       = {McGuire, Joseph C and Brehm, William F},

  abstractNote = {A hydrogen permeation resistant barrier is formed by diffusing aluminum into an iron or nickel alloy and forming an intermetallic aluminide layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1982},

  month        = {1}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Patent Simpson, Lin Jay

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metalmore »« less
Full Text Available
Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Patent Simpson, Lin Jay

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on themore »« less
Full Text Available
Electrical insulator assembly with oxygen permeation barrier

Patent Van Der Beck, Roland R [Lansdale, PA]; Bond, James A [Exton, PA]

A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude themore »« less
Full Text Available
Hydrogen permeation resistant barrier

Patent McGuire, J C; Brehm, W F

A hydrogen permeation resistant barrier is formed by diffusing aluminum into an iron or nickel alloy and forming an intermetallic aluminide layer.
Thermal barrier coating resistant to sintering

Patent Subramanian, Ramesh [Orlando, FL]; Sabol, Stephen M [Orlando, FL]

A device (10) having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10) and is not soluble with the underlying ceramic layer (16). For a YSZ ceramic layer (16) the sintering resistant layer (22) may preferably be aluminum oxide or yttrium aluminum oxide, deposited as a continuous layer or as nodules.
Full Text Available

Similar Records