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Title: Photon detector system

Abstract

A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

Inventors:
 [1]
  1. (Lexington, KY)
Issue Date:
Research Org.:
BATTELLE MEMORIAL INSTITUTE
OSTI Identifier:
864062
Patent Number(s):
4303861
Assignee:
Battelle Development Corporation (Columbus, OH) PNNL
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
photon; detector; semiconductor; device; schottky; barrier; diode; avalanche; breakdown; characteristic; cooled; cryogenic; temperatures; eliminate; thermally; generated; charge; carriers; biased; voltage; level; exceeding; threshold; receipt; occurs; detected; appropriate; circuitry; thereafter; reduces; bias; potential; below; terminate; condition; subsequently; reapplied; preparation; detection; received; bias potential; charge carrier; cryogenic temperature; cryogenic temperatures; charge carriers; threshold level; schottky barrier; semiconductor device; voltage level; photon detector; generated charge; /250/

Citation Formats

Ekstrom, Philip A. Photon detector system. United States: N. p., 1981. Web.
Ekstrom, Philip A. Photon detector system. United States.
Ekstrom, Philip A. Thu . "Photon detector system". United States. https://www.osti.gov/servlets/purl/864062.
@article{osti_864062,
title = {Photon detector system},
author = {Ekstrom, Philip A.},
abstractNote = {A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

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