DOE Patents DOE Patents
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search DOE Patents

Title: Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

Abstract

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10.sup.-8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm.sup.2.

Inventors:
 [1];  [2];  [3]
+ Show Inventor Affiliations
  1. Knoxville, TN
  2. Oak Ridge, TN
  3. Lenoir City, TN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
864003
Patent Number(s):
4292093
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B08 - CLEANING B08B - CLEANING IN GENERAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Show more
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; laser; irradiation; production; atomically; clean; crystalline; silicon; germanium; surfaces; relates; removing; surface; impurities; articles; off-the-shelf; p-; n-type; wafers; doped; junction; devices; principal; contaminants; oxygen; carbon; comprises; laser-irradiating; contaminated; non-reactive; atmosphere; q-switched; pulses; parameters; selected; effect; melting; substantial; vaporization; typical; application; plurality; convert; region; wafer; automatically; accomplished; pressure; below; 10; -8; torr; ruby-laser; energy; density; range; 60; 190; mw; cm; laser irradiation; energy density; surface region; laser pulses; method comprises; laser pulse; silicon wafer; crystalline silicon; typical application; method comprise; surface impurities; pressure below; removing surface; moving surface; comprises laser; reactive atmosphere; atomically clean; junction device; junction devices; /134/117/136/148/219/438/

Citation Formats

Ownby, Gary W, White, Clark W, and Zehner, David M. Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces. United States: N. p., 1981. Web.
Copy to clipboard
Ownby, Gary W, White, Clark W, & Zehner, David M. Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces. United States.
Copy to clipboard
Ownby, Gary W, White, Clark W, and Zehner, David M. Thu . "Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces". United States. https://www.osti.gov/servlets/purl/864003.
Copy to clipboard
@article{osti_864003,
title = {Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces},
author = {Ownby, Gary W and White, Clark W and Zehner, David M},
abstractNote = {This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10.sup.-8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}
Copy to clipboard
Patent:
View Patent
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Similar Records in DOE Patents and OSTI.GOV collections: