Method for crystal growth control
Abstract
The growth of a crystalline body of a selected material is controlled so that the body has a selected cross-sectional shape. The apparatus is of the type which includes the structure normally employed in known capillary die devices as well as means for observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position. The improvement comprises reference object means positioned near the solid/liquid/vapor junction and capable of being observed by the means for observing so as to define said reference position so that the problemsmore »
- Inventors:
-
- Burlington, MA
- Waltham, MA
- Medford, MA
- Issue Date:
- OSTI Identifier:
- 863991
- Patent Number(s):
- 4290835
- Assignee:
- Mobil Tyco Solar Energy Corporation (Waltham, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- NAS7-100
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; crystal; growth; control; crystalline; selected; material; controlled; cross-sectional; shape; apparatus; type; structure; normally; employed; capillary; die; devices; means; observing; portion; surfaces; growing; meniscus; melt; pulled; including; solid; liquid; vapor; junction; direction; substantially; perpendicular; surface; formed; steady; conditions; size; determining; exhibit; sharp; change; amount; reflected; radiation; preselected; wavelength; controlling; speed; temperature; pool; maintain; exhibiting; spatial; position; relative; predetermined; reference; improvement; comprises; positioned; near; capable; observed; define; associated; convection; current; jitter; overcome; reflected radiation; spatial position; means positioned; selected wavelength; substantially perpendicular; improvement comprises; crystal growth; surface formed; cross-sectional shape; reference position; positioned near; selected material; capillary die; position relative; preselected wavelength; normally employed; growing crystalline; selected wave; growing crystal; selected spatial; surface form; /117/
Citation Formats
Yates, Douglas A, Hatch, Arthur E, and Goldsmith, Jeff M. Method for crystal growth control. United States: N. p., 1981.
Web.
Yates, Douglas A, Hatch, Arthur E, & Goldsmith, Jeff M. Method for crystal growth control. United States.
Yates, Douglas A, Hatch, Arthur E, and Goldsmith, Jeff M. Thu .
"Method for crystal growth control". United States. https://www.osti.gov/servlets/purl/863991.
@article{osti_863991,
title = {Method for crystal growth control},
author = {Yates, Douglas A and Hatch, Arthur E and Goldsmith, Jeff M},
abstractNote = {The growth of a crystalline body of a selected material is controlled so that the body has a selected cross-sectional shape. The apparatus is of the type which includes the structure normally employed in known capillary die devices as well as means for observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position. The improvement comprises reference object means positioned near the solid/liquid/vapor junction and capable of being observed by the means for observing so as to define said reference position so that the problems associated with convection current jitter are overcome.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1981},
month = {Thu Jan 01 00:00:00 EST 1981}
}