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Title: Nondestructive method for detecting defects in photodetector and solar cell devices

Abstract

The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.

Inventors:
 [1]
  1. (Rockville, MD)
Issue Date:
OSTI Identifier:
863976
Patent Number(s):
4287473
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
DOE Contract Number:  
EA77A016010
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
nondestructive; method; detecting; defects; photodetector; solar; cell; devices; described; locating; semiconductor; device; measuring; internal; resistance; intrinsic; distributed; nature; provides; forward-biasing; scanning; optical; spot; achieved; illuminator; light; source; external; current; cell device; nondestructive method; light source; solar cell; semiconductor device; current source; method provides; method provide; cell devices; detecting defects; external current; /324/136/

Citation Formats

Sawyer, David E. Nondestructive method for detecting defects in photodetector and solar cell devices. United States: N. p., 1981. Web.
Sawyer, David E. Nondestructive method for detecting defects in photodetector and solar cell devices. United States.
Sawyer, David E. Thu . "Nondestructive method for detecting defects in photodetector and solar cell devices". United States. https://www.osti.gov/servlets/purl/863976.
@article{osti_863976,
title = {Nondestructive method for detecting defects in photodetector and solar cell devices},
author = {Sawyer, David E.},
abstractNote = {The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

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