Silicon MOS inductor
Abstract
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
- Inventors:
- Issue Date:
- Research Org.:
- RCA Corporation, New York, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 863948
- Patent Number(s):
- 4282537
- Application Number:
- 06/068013
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1979 Aug 20
- Country of Publication:
- United States
- Language:
- English
- Subject:
- silicon; inductor; device; amorphous; exhibits; inductive; properties; voltage; biases; frequency; ranges; described; devices; type; integrated; circuit; form; voltage bias; amorphous silicon; integrated circuit; frequency range; type described; circuit form; /257/
Citation Formats
Balberg, Isaac. Silicon MOS inductor. United States: N. p., 1981.
Web.
Balberg, Isaac. Silicon MOS inductor. United States.
Balberg, Isaac. Thu .
"Silicon MOS inductor". United States. https://www.osti.gov/servlets/purl/863948.
@article{osti_863948,
title = {Silicon MOS inductor},
author = {Balberg, Isaac},
abstractNote = {A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1981},
month = {Thu Jan 01 00:00:00 EST 1981}
}
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