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Title: Silicon MOS inductor

Abstract

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Inventors:
 [1]
  1. (Princeton, NJ)
Issue Date:
Research Org.:
RCA CORP
OSTI Identifier:
863948
Patent Number(s):
4282537
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
AC03-78ET21074
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
silicon; inductor; device; amorphous; exhibits; inductive; properties; voltage; biases; frequency; ranges; described; devices; type; integrated; circuit; form; voltage bias; amorphous silicon; integrated circuit; frequency range; type described; circuit form; /257/

Citation Formats

Balberg, Isaac. Silicon MOS inductor. United States: N. p., 1981. Web.
Balberg, Isaac. Silicon MOS inductor. United States.
Balberg, Isaac. Thu . "Silicon MOS inductor". United States. https://www.osti.gov/servlets/purl/863948.
@article{osti_863948,
title = {Silicon MOS inductor},
author = {Balberg, Isaac},
abstractNote = {A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

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