Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering
Abstract
A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.
- Inventors:
-
- Downers Grove, IL
- Naperville, IL
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- OSTI Identifier:
- 863935
- Patent Number(s):
- 4278890
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; means; directing; beam; insulating; surface; implantation; sputtering; directed; control; supplying; simultaneously; stream; electrons; quantity; sufficient; neutralize; overall; electric; charge; result; net; zero; current; flow; adapted; particularly; uniform; areal; disposition; atoms; molecules; insulator; substrate; electric charge; current flow; insulating surface; /250/204/
Citation Formats
Gruen, Dieter M, Krauss, Alan R, and Siskind, Barry. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering. United States: N. p., 1981.
Web.
Gruen, Dieter M, Krauss, Alan R, & Siskind, Barry. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering. United States.
Gruen, Dieter M, Krauss, Alan R, and Siskind, Barry. Thu .
"Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering". United States. https://www.osti.gov/servlets/purl/863935.
@article{osti_863935,
title = {Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering},
author = {Gruen, Dieter M and Krauss, Alan R and Siskind, Barry},
abstractNote = {A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1981},
month = {Thu Jan 01 00:00:00 EST 1981}
}
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