skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering

Abstract

A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

Inventors:
 [1];  [2];  [1]
  1. (Downers Grove, IL)
  2. (Naperville, IL)
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
863935
Patent Number(s):
4278890
Assignee:
United States of America as represented by United States (Washington, DC) ANL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; means; directing; beam; insulating; surface; implantation; sputtering; directed; control; supplying; simultaneously; stream; electrons; quantity; sufficient; neutralize; overall; electric; charge; result; net; zero; current; flow; adapted; particularly; uniform; areal; disposition; atoms; molecules; insulator; substrate; electric charge; current flow; insulating surface; /250/204/

Citation Formats

Gruen, Dieter M., Krauss, Alan R., and Siskind, Barry. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering. United States: N. p., 1981. Web.
Gruen, Dieter M., Krauss, Alan R., & Siskind, Barry. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering. United States.
Gruen, Dieter M., Krauss, Alan R., and Siskind, Barry. Thu . "Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering". United States. https://www.osti.gov/servlets/purl/863935.
@article{osti_863935,
title = {Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering},
author = {Gruen, Dieter M. and Krauss, Alan R. and Siskind, Barry},
abstractNote = {A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

Save / Share: