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Title: Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.
 [1];  [1];  [1]
  1. (Oak Ridge, TN)
Issue Date:
OSTI Identifier:
United States of America as represented by United States (Washington, DC) ORNL
Patent Number(s):
US 4264914
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
Country of Publication:
United States
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