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Title: Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

Abstract

This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

Inventors:
 [1];  [1];  [1]
  1. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
863875
Patent Number(s):
4264914
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
wide-band-gap; alkaline-earth-oxide; semiconductor; devices; utilizing; relates; novel; comparatively; inexpensive; semiconducting; crystals; doped; alkali; metal; produced; simple; relatively; process; specific; example; high-purity; lithium-doped; mgo; crystal; grown; conventional; techniques; heated; oxygen-containing; atmosphere; form; degree; defects; therein; resulting; defect-rich; hot; promptly; quenched; render; stable; temperature; temperatures; quenching; effected; conveniently; contacting; room-temperature; air; alkali metal; semiconductor device; semiconductor devices; conventional techniques; relatively inexpensive; specific example; oxide semiconductor; oxygen-containing atmosphere; oxide crystals; devices utilizing; comparatively inexpensive; oxide crystal; defects therein; crystals doped; containing atmosphere; conducting alkali; /327/252/257/

Citation Formats

Abraham, Marvin M, Chen, Yok, and Kernohan, Robert H. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same. United States: N. p., 1981. Web.
Abraham, Marvin M, Chen, Yok, & Kernohan, Robert H. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same. United States.
Abraham, Marvin M, Chen, Yok, and Kernohan, Robert H. Thu . "Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same". United States. https://www.osti.gov/servlets/purl/863875.
@article{osti_863875,
title = {Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same},
author = {Abraham, Marvin M and Chen, Yok and Kernohan, Robert H},
abstractNote = {This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}