Laser method for forming low-resistance ohmic contacts on semiconducting oxides
Abstract
This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.
- Inventors:
-
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 863856
- Patent Number(s):
- 4261764
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- laser; method; forming; low-resistance; ohmic; contacts; semiconducting; oxides; formation; high-quality; wide-band-gap; exemplified; contact; n-type; batio; containing; p-n; junction; entails; depositing; film; metallic; electroding; material; surface; irradiating; q-switched; pulse; effecting; complete; melting; localized; layer; oxide; immediately; underlying; resulting; solidified; unusually; resistance; thermally; stable; elevated; temperatures; require; cleaning; attachment; suitable; electrical; lead; safe; rapid; reproducible; relatively; inexpensive; conducting oxide; p-n junction; elevated temperatures; laser pulse; elevated temperature; surface layer; ohmic contact; thermally stable; contact resistance; ohmic contacts; relatively inexpensive; resulting solid; solidified metal; electrical lead; semiconducting oxides; metallic contact; laser method; /438/148/219/257/
Citation Formats
Narayan, Jagdish. Laser method for forming low-resistance ohmic contacts on semiconducting oxides. United States: N. p., 1981.
Web.
Narayan, Jagdish. Laser method for forming low-resistance ohmic contacts on semiconducting oxides. United States.
Narayan, Jagdish. Thu .
"Laser method for forming low-resistance ohmic contacts on semiconducting oxides". United States. https://www.osti.gov/servlets/purl/863856.
@article{osti_863856,
title = {Laser method for forming low-resistance ohmic contacts on semiconducting oxides},
author = {Narayan, Jagdish},
abstractNote = {This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}