skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method and structure for passivating semiconductor material

Abstract

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

Inventors:
 [1]
  1. (Princeton, NJ)
Issue Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863827
Patent Number(s):
4254426
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; structure; passivating; semiconductor; material; comprises; substrate; crystalline; relatively; film; carbon; disposed; surface; layer; hydrogenated; amorphous; silicon; deposited; crystalline material; amorphous silicon; semiconductor material; hydrogenated amorphous; carbon film; material comprises; crystalline semiconductor; passivating semiconductor; silicon deposited; /257/136/438/

Citation Formats

Pankove, Jacques I. Method and structure for passivating semiconductor material. United States: N. p., 1981. Web.
Pankove, Jacques I. Method and structure for passivating semiconductor material. United States.
Pankove, Jacques I. Thu . "Method and structure for passivating semiconductor material". United States. https://www.osti.gov/servlets/purl/863827.
@article{osti_863827,
title = {Method and structure for passivating semiconductor material},
author = {Pankove, Jacques I.},
abstractNote = {A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

Save / Share: