Method and structure for passivating semiconductor material
Abstract
A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.
- Inventors:
-
- Princeton, NJ
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, NJ (USA)
- OSTI Identifier:
- 863827
- Patent Number(s):
- 4254426
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- EY-76-C-03-1286
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; structure; passivating; semiconductor; material; comprises; substrate; crystalline; relatively; film; carbon; disposed; surface; layer; hydrogenated; amorphous; silicon; deposited; crystalline material; amorphous silicon; semiconductor material; hydrogenated amorphous; carbon film; material comprises; crystalline semiconductor; passivating semiconductor; silicon deposited; /257/136/438/
Citation Formats
Pankove, Jacques I. Method and structure for passivating semiconductor material. United States: N. p., 1981.
Web.
Pankove, Jacques I. Method and structure for passivating semiconductor material. United States.
Pankove, Jacques I. Thu .
"Method and structure for passivating semiconductor material". United States. https://www.osti.gov/servlets/purl/863827.
@article{osti_863827,
title = {Method and structure for passivating semiconductor material},
author = {Pankove, Jacques I},
abstractNote = {A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}
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