Amorphous semiconductor solar cell
Abstract
A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 863797
- Patent Number(s):
- 4251287
- Application Number:
- 06/080194
- Assignee:
- University of Delaware (Newark, DE)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC03-79ET23034
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1979 Oct 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- amorphous; semiconductor; solar; cell; comprising; electrical; contact; silicon; base; junction; layers; top; manufacture; step; heat; treating; physical; layer; diffuse; dopant; species; electrical contact; amorphous silicon; solar cell; base layer; cell comprising; heat treating; amorphous semiconductor; silicon semiconductor; top electrical; /136/257/438/
Citation Formats
Dalal, Vikram L. Amorphous semiconductor solar cell. United States: N. p., 1981.
Web.
Dalal, Vikram L. Amorphous semiconductor solar cell. United States.
Dalal, Vikram L. Thu .
"Amorphous semiconductor solar cell". United States. https://www.osti.gov/servlets/purl/863797.
@article{osti_863797,
title = {Amorphous semiconductor solar cell},
author = {Dalal, Vikram L.},
abstractNote = {A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1981},
month = {Thu Jan 01 00:00:00 EST 1981}
}
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