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Title: Amorphous semiconductor solar cell

Abstract

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Inventors:
 [1]
  1. (Newark, DE)
Issue Date:
Research Org.:
UNIVERSITY OF DELAWARE
OSTI Identifier:
863797
Patent Number(s):
4251287
Assignee:
University of Delaware (Newark, DE) OSTI
DOE Contract Number:  
AC03-79ET23034
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
amorphous; semiconductor; solar; cell; comprising; electrical; contact; silicon; base; junction; layers; top; manufacture; step; heat; treating; physical; layer; diffuse; dopant; species; electrical contact; amorphous silicon; solar cell; base layer; cell comprising; heat treating; amorphous semiconductor; silicon semiconductor; top electrical; /136/257/438/

Citation Formats

Dalal, Vikram L. Amorphous semiconductor solar cell. United States: N. p., 1981. Web.
Dalal, Vikram L. Amorphous semiconductor solar cell. United States.
Dalal, Vikram L. Thu . "Amorphous semiconductor solar cell". United States. https://www.osti.gov/servlets/purl/863797.
@article{osti_863797,
title = {Amorphous semiconductor solar cell},
author = {Dalal, Vikram L.},
abstractNote = {A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

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