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Title: Thermal decomposition of silane to form hydrogenated amorphous Si film

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Inventors:
 [1];  [2];  [3];  [4];  [5]
+ Show Inventor Affiliations
  1. Center Moriches, NY
  2. Rocky Point, NY
  3. Wantagh, NY
  4. Oxford, GB
  5. (Midlothian, VA)
Issue Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
OSTI Identifier:
863739
Patent Number(s):
4237151
Assignee:
United States of America as represented by United States (Washington, D. C. 20545)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
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DOE Contract Number:  
EY-76-C-02-0016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/

Citation Formats

Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States: N. p., 1980. Web.
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Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States.
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Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Tue . "Thermal decomposition of silane to form hydrogenated amorphous Si film". United States. https://www.osti.gov/servlets/purl/863739.
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@article{osti_863739,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si film},
author = {Strongin, Myron and Ghosh, Arup K and Wiesmann, Harold J and Rock, Edward B and Lutz, III, Harry A.},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}
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