Thermal decomposition of silane to form hydrogenated amorphous Si film
Abstract
This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.
- Inventors:
-
- Center Moriches, NY
- Rocky Point, NY
- Wantagh, NY
- Oxford, GB
- (Midlothian, VA)
- Issue Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- OSTI Identifier:
- 863739
- Patent Number(s):
- 4237151
- Assignee:
- United States of America as represented by United States (Washington, D. C. 20545)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- DOE Contract Number:
- EY-76-C-02-0016
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/
Citation Formats
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States: N. p., 1980.
Web.
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States.
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Tue .
"Thermal decomposition of silane to form hydrogenated amorphous Si film". United States. https://www.osti.gov/servlets/purl/863739.
@article{osti_863739,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si film},
author = {Strongin, Myron and Ghosh, Arup K and Wiesmann, Harold J and Rock, Edward B and Lutz, III, Harry A.},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}