Thermal decomposition of silane to form hydrogenated amorphous Si film
Abstract
This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.
- Inventors:
-
- Center Moriches, NY
- Rocky Point, NY
- Wantagh, NY
- Oxford, GB
- (Midlothian, VA)
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- OSTI Identifier:
- 863739
- Patent Number(s):
- 4237151
- Assignee:
- United States of America as represented by United States (Washington, D. C. 20545)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EY-76-C-02-0016
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/
Citation Formats
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States: N. p., 1980.
Web.
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States.
Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Tue .
"Thermal decomposition of silane to form hydrogenated amorphous Si film". United States. https://www.osti.gov/servlets/purl/863739.
@article{osti_863739,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si film},
author = {Strongin, Myron and Ghosh, Arup K and Wiesmann, Harold J and Rock, Edward B and Lutz, III, Harry A.},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}
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