Thermal decomposition of silane to form hydrogenated amorphous Si film

Title: Thermal decomposition of silane to form hydrogenated amorphous Si film

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Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Inventors:

Strongin, Myron ^[1]; Ghosh, Arup K ^[2]; Wiesmann, Harold J ^[3]; Rock, Edward B ^[4]; Lutz, III, Harry A. ^[5]

Center Moriches, NY
Rocky Point, NY
Wantagh, NY
Oxford, GB
(Midlothian, VA)

Issue Date:: 1980-01-01

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

OSTI Identifier:: 863739

Patent Number(s):: 4237151

Assignee:: United States of America as represented by United States (Washington, D. C. 20545)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/202 - {including only elements of Group IV of the Periodic System}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/24 - Deposition of silicon only

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DOE Contract Number:: EY-76-C-02-0016

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/

Citation Formats


                    Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film.  United States: N. p., 1980. 
        Web.

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                    Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film.  United States.

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                    Strongin, Myron, Ghosh, Arup K, Wiesmann, Harold J, Rock, Edward B, and Lutz, III, Harry A. Tue .  
        "Thermal decomposition of silane to form hydrogenated amorphous Si film".  United States.  https://www.osti.gov/servlets/purl/863739.

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@article{osti_863739,

  title        = {Thermal decomposition of silane to form hydrogenated amorphous Si film},

  author       = {Strongin, Myron and Ghosh, Arup K and Wiesmann, Harold J and Rock, Edward B and Lutz, III, Harry A.},

  abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1980},

  month        = {1}

}

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