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Title: Thermal decomposition of silane to form hydrogenated amorphous Si film

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. (Center Moriches, NY)
  2. (Rocky Point, NY)
  3. (Wantagh, NY)
  4. (Oxford, GB)
  5. (Midlothian, VA)
Issue Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY
OSTI Identifier:
863739
Patent Number(s):
4237151
Assignee:
United States of America as represented by United States (Washington, D. C. 20545) BNL
DOE Contract Number:  
EY-76-C-02-0016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/

Citation Formats

Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States: N. p., 1980. Web.
Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States.
Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., and Lutz, III, Harry A. Tue . "Thermal decomposition of silane to form hydrogenated amorphous Si film". United States. https://www.osti.gov/servlets/purl/863739.
@article{osti_863739,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si film},
author = {Strongin, Myron and Ghosh, Arup K. and Wiesmann, Harold J. and Rock, Edward B. and Lutz, III, Harry A.},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

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