Thermal decomposition of silane to form hydrogenated amorphous Si film

Title: Thermal decomposition of silane to form hydrogenated amorphous Si film

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Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Inventors:

Strongin, Myron ^[1]; Ghosh, Arup K. ^[2]; Wiesmann, Harold J. ^[3]; Rock, Edward B. ^[4]; Lutz, III, Harry A. ^[5]

(Center Moriches, NY)
(Rocky Point, NY)
(Wantagh, NY)
(Oxford, GB)
(Midlothian, VA)

Issue Date:: 1980-01-01

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY

OSTI Identifier:: 863739

Patent Number(s):: 4237151

Assignee:: United States of America as represented by United States (Washington, D. C. 20545) BNL

DOE Contract Number:: EY-76-C-02-0016

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: thermal; decomposition; silane; form; hydrogenated; amorphous; film; relates; silicon; produced; thermally; decomposing; silano; sih; gases; comprising; elevated; temperatures; 1700; degree; -2300; preferably; vacuum; 10; -8; -4; torr; gaseous; mixture; atomic; hydrogen; depositing; substrate; outside; source; gases comprising; thermally decomposing; atomic hydrogen; thermal decomposition; elevated temperatures; gaseous mixture; amorphous silicon; elevated temperature; hydrogenated amorphous; silicon produced; form hydrogen; form hydrogenated; /427/136/252/423/428/438/

Citation Formats


                    Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., and Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film.  United States: N. p., 1980. 
        Web.

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                    Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., & Lutz, III, Harry A. Thermal decomposition of silane to form hydrogenated amorphous Si film.  United States.

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                    Strongin, Myron, Ghosh, Arup K., Wiesmann, Harold J., Rock, Edward B., and Lutz, III, Harry A. Tue .  
        "Thermal decomposition of silane to form hydrogenated amorphous Si film".  United States.  https://www.osti.gov/servlets/purl/863739.

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@article{osti_863739,

  title        = {Thermal decomposition of silane to form hydrogenated amorphous Si film},

  author       = {Strongin, Myron and Ghosh, Arup K. and Wiesmann, Harold J. and Rock, Edward B. and Lutz, III, Harry A.},

  abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1980},

  month        = {1}

}

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