Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
Abstract
The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.
- Inventors:
-
- Yardley, PA
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, NJ (USA)
- OSTI Identifier:
- 863676
- Patent Number(s):
- 4226643
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EY-76-C-03-1286
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; enhancing; electronic; properties; undoped; n-type; hydrogenated; amorphous; silicon; film; dark; conductivity; photoconductivity; layer; fabricated; dc; proximity; glow; discharge; silane; increased; incorporation; argon; amount; 10; 90; percent; volume; atmosphere; contains; silicon-hydrogen; containing; compound; containing compound; silicon film; silicon layer; volume percent; amorphous silicon; hydrogenated amorphous; glow discharge; electronic properties; hydrogen containing; /136/427/
Citation Formats
Carlson, David E. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film. United States: N. p., 1980.
Web.
Carlson, David E. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film. United States.
Carlson, David E. Tue .
"Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film". United States. https://www.osti.gov/servlets/purl/863676.
@article{osti_863676,
title = {Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film},
author = {Carlson, David E},
abstractNote = {The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}
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