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Title: Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

Abstract

The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

Inventors:
 [1]
  1. (Yardley, PA)
Issue Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863676
Patent Number(s):
4226643
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; enhancing; electronic; properties; undoped; n-type; hydrogenated; amorphous; silicon; film; dark; conductivity; photoconductivity; layer; fabricated; dc; proximity; glow; discharge; silane; increased; incorporation; argon; amount; 10; 90; percent; volume; atmosphere; contains; silicon-hydrogen; containing; compound; containing compound; silicon film; silicon layer; volume percent; amorphous silicon; hydrogenated amorphous; glow discharge; electronic properties; hydrogen containing; /136/427/

Citation Formats

Carlson, David E. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film. United States: N. p., 1980. Web.
Carlson, David E. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film. United States.
Carlson, David E. Tue . "Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film". United States. https://www.osti.gov/servlets/purl/863676.
@article{osti_863676,
title = {Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film},
author = {Carlson, David E.},
abstractNote = {The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

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