Method of inducing differential etch rates in glow discharge produced amorphous silicon
Abstract
A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.
- Inventors:
-
- Lawrenceville, NJ
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, NJ (USA)
- OSTI Identifier:
- 863634
- Patent Number(s):
- 4217393
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EY-76-C-03-1286
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; inducing; differential; etch; rates; glow; discharge; produced; amorphous; silicon; heating; portion; temperature; 365; degree; deposition; prior; etching; rate; exposed; unheated; amorphous silicon; glow discharge; produced amorphous; temperature prior; etch rates; discharge produced; inducing differential; differential etch; /428/136/427/438/
Citation Formats
Staebler, David L, and Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon. United States: N. p., 1980.
Web.
Staebler, David L, & Zanzucchi, Peter J. Method of inducing differential etch rates in glow discharge produced amorphous silicon. United States.
Staebler, David L, and Zanzucchi, Peter J. Tue .
"Method of inducing differential etch rates in glow discharge produced amorphous silicon". United States. https://www.osti.gov/servlets/purl/863634.
@article{osti_863634,
title = {Method of inducing differential etch rates in glow discharge produced amorphous silicon},
author = {Staebler, David L and Zanzucchi, Peter J},
abstractNote = {A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}
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