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Title: Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

Abstract

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Inventors:
 [1];  [2]
  1. Morris Plains, NJ
  2. New Providence, NJ
Issue Date:
Research Org.:
Exxon Research and Engineering Co., Linden, N.J. (USA)
OSTI Identifier:
863533
Patent Number(s):
4193821
Assignee:
Exxon Research & Engineering Co. (Florham Park, NJ)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
EY-76-C-03-1283
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
fabrication; heterojunction; solar; cells; improved; oxide; deposition; insulating; layer; highly; efficient; oxide-silicon; prepared; heating; silicon; substrate; thereon; provide; temperature; range; 300; degree; 400; thereafter; spraying; so-heated; solution; tetrachloride; organic; ester; boiling; below; 250; preferably; naturally; grown; layer thereon; heterojunction solar; solar cell; solar cells; silicon substrate; oxide layer; silicon oxide; highly efficient; insulating layer; heated substrate; substrate temperature; junction solar; boiling below; rate temperature; oxide-silicon heterojunction; oxide deposition; /438/136/257/427/428/

Citation Formats

Feng, Tom, and Ghosh, Amal K. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer. United States: N. p., 1980. Web.
Feng, Tom, & Ghosh, Amal K. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer. United States.
Feng, Tom, and Ghosh, Amal K. Tue . "Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer". United States. https://www.osti.gov/servlets/purl/863533.
@article{osti_863533,
title = {Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer},
author = {Feng, Tom and Ghosh, Amal K},
abstractNote = {Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

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