Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer
Abstract
Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.
- Inventors:
-
- Morris Plains, NJ
- New Providence, NJ
- Issue Date:
- Research Org.:
- Exxon Research and Engineering Co., Linden, N.J. (USA)
- OSTI Identifier:
- 863533
- Patent Number(s):
- 4193821
- Assignee:
- Exxon Research & Engineering Co. (Florham Park, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EY-76-C-03-1283
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- fabrication; heterojunction; solar; cells; improved; oxide; deposition; insulating; layer; highly; efficient; oxide-silicon; prepared; heating; silicon; substrate; thereon; provide; temperature; range; 300; degree; 400; thereafter; spraying; so-heated; solution; tetrachloride; organic; ester; boiling; below; 250; preferably; naturally; grown; layer thereon; heterojunction solar; solar cell; solar cells; silicon substrate; oxide layer; silicon oxide; highly efficient; insulating layer; heated substrate; substrate temperature; junction solar; boiling below; rate temperature; oxide-silicon heterojunction; oxide deposition; /438/136/257/427/428/
Citation Formats
Feng, Tom, and Ghosh, Amal K. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer. United States: N. p., 1980.
Web.
Feng, Tom, & Ghosh, Amal K. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer. United States.
Feng, Tom, and Ghosh, Amal K. Tue .
"Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer". United States. https://www.osti.gov/servlets/purl/863533.
@article{osti_863533,
title = {Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer},
author = {Feng, Tom and Ghosh, Amal K},
abstractNote = {Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}
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