Superconducting transistor
Abstract
A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.
- Inventors:
-
- Naperville, IL
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- OSTI Identifier:
- 863369
- Patent Number(s):
- 4157555
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- superconducting; transistor; formed; disposing; films; material; planar; parallel; arrangement; insulating; layers; oxides; form; tunnel; junctions; junction; biased; twice; energy; gap; injection; quasiparticles; center; film; provides; current; tunnel junctions; tunnel junction; conducting material; superconducting material; parallel arrangement; energy gap; superconducting transistor; /257/327/505/
Citation Formats
Gray, Kenneth E. Superconducting transistor. United States: N. p., 1979.
Web.
Gray, Kenneth E. Superconducting transistor. United States.
Gray, Kenneth E. Mon .
"Superconducting transistor". United States. https://www.osti.gov/servlets/purl/863369.
@article{osti_863369,
title = {Superconducting transistor},
author = {Gray, Kenneth E},
abstractNote = {A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}