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Title: Superconducting transistor

Abstract

A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.

Inventors:
 [1]
  1. Naperville, IL
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
OSTI Identifier:
863369
Patent Number(s):
4157555
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
superconducting; transistor; formed; disposing; films; material; planar; parallel; arrangement; insulating; layers; oxides; form; tunnel; junctions; junction; biased; twice; energy; gap; injection; quasiparticles; center; film; provides; current; tunnel junctions; tunnel junction; conducting material; superconducting material; parallel arrangement; energy gap; superconducting transistor; /257/327/505/

Citation Formats

Gray, Kenneth E. Superconducting transistor. United States: N. p., 1979. Web.
Gray, Kenneth E. Superconducting transistor. United States.
Gray, Kenneth E. Mon . "Superconducting transistor". United States. https://www.osti.gov/servlets/purl/863369.
@article{osti_863369,
title = {Superconducting transistor},
author = {Gray, Kenneth E},
abstractNote = {A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

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