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Title: Method for forming p-n junctions and solar-cells by laser-beam processing

Abstract

This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

Inventors:
 [1];  [1]
  1. Knoxville, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
863317
Patent Number(s):
4147563
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; p-n; junctions; solar-cells; laser-beam; processing; improved; preparing; junction; devices; diodes; solar; cells; high-quality; prepared; effecting; laser-diffusion; selected; dopant; silicon; means; laser; pulses; wavelength; energy; density; cm; duration; 20; 60; nanoseconds; initially; deposited; superficial; layer; preferably; thickness; range; 50; 100; depending; application; values; above-mentioned; pulse; parameters; produce; melting; depths; 1000; one-sun; conversion; efficiency; 10; antireflective; coating; back-surface; fields; antireflective coating; reflective coating; p-n junctions; p-n junction; laser pulses; conversion efficiency; improved method; laser pulse; solar cell; solar cells; superficial layer; pulse parameters; surface field; junction device; junction devices; /438/136/148/219/257/

Citation Formats

Narayan, Jagdish, and Young, Rosa T. Method for forming p-n junctions and solar-cells by laser-beam processing. United States: N. p., 1979. Web.
Narayan, Jagdish, & Young, Rosa T. Method for forming p-n junctions and solar-cells by laser-beam processing. United States.
Narayan, Jagdish, and Young, Rosa T. Mon . "Method for forming p-n junctions and solar-cells by laser-beam processing". United States. https://www.osti.gov/servlets/purl/863317.
@article{osti_863317,
title = {Method for forming p-n junctions and solar-cells by laser-beam processing},
author = {Narayan, Jagdish and Young, Rosa T},
abstractNote = {This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

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