High temperature electronic gain device

Title: High temperature electronic gain device

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Abstract

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Inventors:

McCormick, J Byron ^[1]; Depp, Steven W ^[1]; Hamilton, Douglas J ^[2]; Kerwin, William J ^[2]

Los Alamos, NM
Tucson, AZ

Issue Date:: 1979-01-01

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

OSTI Identifier:: 863282

Patent Number(s):: 4138622

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J9/14 - of non-emitting electrodes
H01J1/46 - Control electrodes, e.g. grid
H01J21/10 - with one or more immovable internal control electrodes, e.g. triode, pentode, octode
H01J1/20 - Cathodes heated indirectly by an electric current

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Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: temperature; electronic; device; integrated; thermionic; suitable; radiation; environments; cathode; control; electrodes; deposited; substrate; facing; anode; substrates; sealed; refractory; wall; evacuated; form; triode; vacuum; tube; thermionic device; vacuum tube; temperature electronic; radiation environment; device suitable; /313/

Citation Formats


                    McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, and Kerwin, William J. High temperature electronic gain device.  United States: N. p., 1979. 
        Web.

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                    McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, & Kerwin, William J. High temperature electronic gain device.  United States.

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                    McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, and Kerwin, William J. Mon .  
        "High temperature electronic gain device".  United States.  https://www.osti.gov/servlets/purl/863282.

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@article{osti_863282,

  title        = {High temperature electronic gain device},

  author       = {McCormick, J Byron and Depp, Steven W and Hamilton, Douglas J and Kerwin, William J},

  abstractNote = {An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1979},

  month        = {1}

}

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