High temperature electronic gain device
Abstract
An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.
- Inventors:
-
- Los Alamos, NM
- Tucson, AZ
- Issue Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 863282
- Patent Number(s):
- 4138622
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- temperature; electronic; device; integrated; thermionic; suitable; radiation; environments; cathode; control; electrodes; deposited; substrate; facing; anode; substrates; sealed; refractory; wall; evacuated; form; triode; vacuum; tube; thermionic device; vacuum tube; temperature electronic; radiation environment; device suitable; /313/
Citation Formats
McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, and Kerwin, William J. High temperature electronic gain device. United States: N. p., 1979.
Web.
McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, & Kerwin, William J. High temperature electronic gain device. United States.
McCormick, J Byron, Depp, Steven W, Hamilton, Douglas J, and Kerwin, William J. Mon .
"High temperature electronic gain device". United States. https://www.osti.gov/servlets/purl/863282.
@article{osti_863282,
title = {High temperature electronic gain device},
author = {McCormick, J Byron and Depp, Steven W and Hamilton, Douglas J and Kerwin, William J},
abstractNote = {An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}
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