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Title: High temperature electronic gain device

Abstract

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Inventors:
 [1];  [1];  [2];  [2]
  1. (Los Alamos, NM)
  2. (Tucson, AZ)
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM
OSTI Identifier:
863282
Patent Number(s):
4138622
Assignee:
United States of America as represented by United States (Washington, DC) LANL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
temperature; electronic; device; integrated; thermionic; suitable; radiation; environments; cathode; control; electrodes; deposited; substrate; facing; anode; substrates; sealed; refractory; wall; evacuated; form; triode; vacuum; tube; thermionic device; vacuum tube; temperature electronic; radiation environment; device suitable; /313/

Citation Formats

McCormick, J. Byron, Depp, Steven W., Hamilton, Douglas J., and Kerwin, William J. High temperature electronic gain device. United States: N. p., 1979. Web.
McCormick, J. Byron, Depp, Steven W., Hamilton, Douglas J., & Kerwin, William J. High temperature electronic gain device. United States.
McCormick, J. Byron, Depp, Steven W., Hamilton, Douglas J., and Kerwin, William J. Mon . "High temperature electronic gain device". United States. https://www.osti.gov/servlets/purl/863282.
@article{osti_863282,
title = {High temperature electronic gain device},
author = {McCormick, J. Byron and Depp, Steven W. and Hamilton, Douglas J. and Kerwin, William J.},
abstractNote = {An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

Patent:

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