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Title: Apparatus for growing HgI.sub.2 crystals

Abstract

A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

Inventors:
 [1];  [1];  [1]
  1. Jerusalem, IL
Issue Date:
Research Org.:
Hebrew University Of Jerusalem
OSTI Identifier:
863107
Patent Number(s):
4094268
Assignee:
United States Department of Energy (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
E(29-1)-1183
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
apparatus; growing; hgi; crystals; method; horizontal; furnace; vapor; phase; growth; utilizes; controlled; axial; radial; airflow; maintain; desired; temperature; gradients; ampoule; containing; source; material; rotated; air; tubes; moved; opposite; directions; crystal; distance; associated; gradient; respect; whereby; interface; advance; according; crystallographic; structure; grown; particularly; applicable; room-temperature; nuclear; radiation; detectors; crystals grown; air tubes; opposite direction; nuclear radiation; opposite directions; particularly applicable; temperature gradient; source material; radiation detector; crystal growth; radiation detectors; vapor phase; temperature gradients; desired temperature; radial air; radial airflow; phase growth; graphic structure; crystallographic structure; utilizes controlled; growing crystal; horizontal furnace; temperature nuclear; ampoule containing; air tube; controlled axial; /117/118/422/

Citation Formats

Schieber, Michael M, Beinglass, Israel, and Dishon, Giora. Apparatus for growing HgI.sub.2 crystals. United States: N. p., 1978. Web.
Schieber, Michael M, Beinglass, Israel, & Dishon, Giora. Apparatus for growing HgI.sub.2 crystals. United States.
Schieber, Michael M, Beinglass, Israel, and Dishon, Giora. Sun . "Apparatus for growing HgI.sub.2 crystals". United States. https://www.osti.gov/servlets/purl/863107.
@article{osti_863107,
title = {Apparatus for growing HgI.sub.2 crystals},
author = {Schieber, Michael M and Beinglass, Israel and Dishon, Giora},
abstractNote = {A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1978},
month = {1}
}

Patent:

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