Electron emitting device and method of making the same
Abstract
A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
- Inventors:
-
- Cranbury, NJ
- Hightstown, NJ
- Freehold, NJ
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, N.J. (USA)
- OSTI Identifier:
- 862814
- Patent Number(s):
- 4019082
- Application Number:
- 05/561,353
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- 11-6604
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electron; emitting; device; method; substrate; single; crystalline; gallium; arsenide; surface; layer; indium; phosphide; function; reducing; material; therethrough; exposing; portion; indium gallium; electron emitting; single crystalline; single crystal; gallium arsenide; emitting device; crystalline gallium; /313/257/427/438/
Citation Formats
Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, and Ettenberg, Michael. Electron emitting device and method of making the same. United States: N. p., 1977.
Web.
Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, & Ettenberg, Michael. Electron emitting device and method of making the same. United States.
Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, and Ettenberg, Michael. Tue .
"Electron emitting device and method of making the same". United States. https://www.osti.gov/servlets/purl/862814.
@article{osti_862814,
title = {Electron emitting device and method of making the same},
author = {Olsen, Gregory Hammond and Martinelli, Ramon Ubaldo and Ettenberg, Michael},
abstractNote = {A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1977},
month = {4}
}