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Title: Electron emitting device and method of making the same

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
Inventors:
 [1];  [2];  [3]
  1. (Cranbury, NJ)
  2. (Hightstown, NJ)
  3. (Freehold, NJ)
Issue Date:
OSTI Identifier:
862814
Assignee:
RCA Corporation (New York, NY) INEEL
Patent Number(s):
US 4019082
Application Number:
05/561,353
Contract Number:
11-6604
Research Org:
RCA Labs., Princeton, N.J. (USA)
Country of Publication:
United States
Language:
English
Subject:
electron; emitting; device; method; substrate; single; crystalline; gallium; arsenide; surface; layer; indium; phosphide; function; reducing; material; therethrough; exposing; portion; indium gallium; electron emitting; single crystalline; single crystal; gallium arsenide; emitting device; crystalline gallium; /313/257/427/438/