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Title: Electron emitting device and method of making the same

Abstract

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

Inventors:
 [1];  [2];  [3]
  1. Cranbury, NJ
  2. Hightstown, NJ
  3. Freehold, NJ
Issue Date:
Research Org.:
RCA Labs., Princeton, N.J. (USA)
OSTI Identifier:
862814
Patent Number(s):
4019082
Application Number:
05/561,353
Assignee:
RCA Corporation (New York, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
11-6604
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electron; emitting; device; method; substrate; single; crystalline; gallium; arsenide; surface; layer; indium; phosphide; function; reducing; material; therethrough; exposing; portion; indium gallium; electron emitting; single crystalline; single crystal; gallium arsenide; emitting device; crystalline gallium; /313/257/427/438/

Citation Formats

Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, and Ettenberg, Michael. Electron emitting device and method of making the same. United States: N. p., 1977. Web.
Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, & Ettenberg, Michael. Electron emitting device and method of making the same. United States.
Olsen, Gregory Hammond, Martinelli, Ramon Ubaldo, and Ettenberg, Michael. Tue . "Electron emitting device and method of making the same". United States. https://www.osti.gov/servlets/purl/862814.
@article{osti_862814,
title = {Electron emitting device and method of making the same},
author = {Olsen, Gregory Hammond and Martinelli, Ramon Ubaldo and Ettenberg, Michael},
abstractNote = {A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1977},
month = {4}
}

Patent:

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