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Title: Method for preparing superconductors

Abstract

A superconductor having an equiaxed fine grain beta-tungsten crystalline structure found to have improved high field critical current densities is prepared by sputter-depositing superconductive material onto a substrate cooled to below 200.degree. C. and heat-treating the deposited material.

Inventors:
 [1]
  1. Richland, WA
Issue Date:
Research Org.:
Battelle Pacific Northwest Labs., Richland, WA (United States)
OSTI Identifier:
862679
Patent Number(s):
3988178
Assignee:
United States of America as represented by United States Energy (Washington, DC)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
C - CHEMISTRY C22 - METALLURGY C22F - CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
DOE Contract Number:  
E(45-1)-1830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; superconductors; superconductor; equiaxed; fine; grain; beta-tungsten; crystalline; structure; found; improved; field; critical; current; densities; prepared; sputter-depositing; superconductive; material; substrate; cooled; below; 200; degree; heat-treating; deposited; current densities; conductive material; critical current; superconductive material; crystalline structure; deposited material; fine grain; preparing superconductors; line structure; /148/204/420/428/505/

Citation Formats

Dahlgren, Shelley D. Method for preparing superconductors. United States: N. p., 1976. Web.
Dahlgren, Shelley D. Method for preparing superconductors. United States.
Dahlgren, Shelley D. Thu . "Method for preparing superconductors". United States. https://www.osti.gov/servlets/purl/862679.
@article{osti_862679,
title = {Method for preparing superconductors},
author = {Dahlgren, Shelley D},
abstractNote = {A superconductor having an equiaxed fine grain beta-tungsten crystalline structure found to have improved high field critical current densities is prepared by sputter-depositing superconductive material onto a substrate cooled to below 200.degree. C. and heat-treating the deposited material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1976},
month = {1}
}

Patent:

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