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Title: Planarization of metal films for multilevel interconnects

Abstract

In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

Inventors:
Issue Date:
OSTI Identifier:
7266783
Patent Number(s):
4814578 A
Application Number:
PPN: US 7-065473
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; EDB-94-117917
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 23 Jun 1987
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; FABRICATION; METALS; SURFACE FINISHING; LASER RADIATION; MELTING; ROUGHNESS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTS; MICROELECTRONIC CIRCUITS; PHASE TRANSFORMATIONS; RADIATIONS; SURFACE PROPERTIES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Tuckerman, D.B. Planarization of metal films for multilevel interconnects. United States: N. p., 1989. Web.
Tuckerman, D.B. Planarization of metal films for multilevel interconnects. United States.
Tuckerman, D.B. Tue . "Planarization of metal films for multilevel interconnects". United States.
@article{osti_7266783,
title = {Planarization of metal films for multilevel interconnects},
author = {Tuckerman, D.B.},
abstractNote = {In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {3}
}