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Title: Thin film photovoltaic device

Abstract

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Inventors:
;
Issue Date:
OSTI Identifier:
7261723
Patent Number(s):
4342879 A
Application Number:
PPN: US 6-200447
Assignee:
Univ. of Delaware, Newark, DE (United States) PTO; EDB-94-122076
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 Oct 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ZINC PHOSPHIDE SOLAR CELLS; DESIGN; DOPED MATERIALS; FABRICATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; THIN FILMS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Catalano, A.W., and Bhushan, M. Thin film photovoltaic device. United States: N. p., 1982. Web.
Catalano, A.W., & Bhushan, M. Thin film photovoltaic device. United States.
Catalano, A.W., and Bhushan, M. Tue . "Thin film photovoltaic device". United States.
@article{osti_7261723,
title = {Thin film photovoltaic device},
author = {Catalano, A.W. and Bhushan, M.},
abstractNote = {A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {8}
}