Thin film photovoltaic device
Abstract
A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7261723
- Patent Number(s):
- 4342879
- Application Number:
- PPN: US 6-200447
- Assignee:
- Univ. of Delaware, Newark, DE (United States)
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 24 Oct 1980
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; ZINC PHOSPHIDE SOLAR CELLS; DESIGN; DOPED MATERIALS; FABRICATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; THIN FILMS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Catalano, A W, and Bhushan, M. Thin film photovoltaic device. United States: N. p., 1982.
Web.
Catalano, A W, & Bhushan, M. Thin film photovoltaic device. United States.
Catalano, A W, and Bhushan, M. Tue .
"Thin film photovoltaic device". United States.
@article{osti_7261723,
title = {Thin film photovoltaic device},
author = {Catalano, A W and Bhushan, M},
abstractNote = {A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {8}
}
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