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Title: Thin films of mixed metal compounds

Abstract

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Inventors:
;
Issue Date:
OSTI Identifier:
7261689
Patent Number(s):
4523051 A
Application Number:
PPN: US 6-536395
Assignee:
Boeing Co., Seattle, WA (United States) PTO; EDB-94-122105
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Resource Relation:
Patent File Date: 27 Sep 1983
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; DESIGN; FABRICATION; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; EQUIPMENT; JUNCTIONS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Mickelsen, R.A., and Chen, W.S. Thin films of mixed metal compounds. United States: N. p., 1985. Web.
Mickelsen, R.A., & Chen, W.S. Thin films of mixed metal compounds. United States.
Mickelsen, R.A., and Chen, W.S. Tue . "Thin films of mixed metal compounds". United States.
@article{osti_7261689,
title = {Thin films of mixed metal compounds},
author = {Mickelsen, R.A. and Chen, W.S.},
abstractNote = {Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {6}
}