Thin films of mixed metal compounds
Abstract
Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7261689
- Patent Number(s):
- 4523051
- Application Number:
- PPN: US 6-536395
- Assignee:
- Boeing Co., Seattle, WA (United States)
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 27 Sep 1983
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SOLAR CELLS; DESIGN; FABRICATION; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; EQUIPMENT; JUNCTIONS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Mickelsen, R A, and Chen, W S. Thin films of mixed metal compounds. United States: N. p., 1985.
Web.
Mickelsen, R A, & Chen, W S. Thin films of mixed metal compounds. United States.
Mickelsen, R A, and Chen, W S. Tue .
"Thin films of mixed metal compounds". United States.
@article{osti_7261689,
title = {Thin films of mixed metal compounds},
author = {Mickelsen, R A and Chen, W S},
abstractNote = {Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {6}
}