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Title: Thick crystalline films on foreign substrates

Abstract

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
OSTI Identifier:
7249375
Patent Number(s):
4576676
Application Number:
PPN: US 6-497620
Assignee:
Massachusetts Inst. of Tech., Cambridge, MA (United States)
DOE Contract Number:  
AC02-82ER13019
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 May 1983
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FILMS; FABRICATION; RECRYSTALLIZATION; GRAIN ORIENTATION; GRAIN SIZE; MICROSTRUCTURE; ORIENTATION; SIZE; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture; 360102 - Metals & Alloys- Structure & Phase Studies; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Smith, H I, Atwater, H A, and Geis, M W. Thick crystalline films on foreign substrates. United States: N. p., 1986. Web.
Smith, H I, Atwater, H A, & Geis, M W. Thick crystalline films on foreign substrates. United States.
Smith, H I, Atwater, H A, and Geis, M W. Tue . "Thick crystalline films on foreign substrates". United States.
@article{osti_7249375,
title = {Thick crystalline films on foreign substrates},
author = {Smith, H I and Atwater, H A and Geis, M W},
abstractNote = {To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {3}
}