Thick crystalline films on foreign substrates
Abstract
To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- OSTI Identifier:
- 7249375
- Patent Number(s):
- 4576676
- Application Number:
- PPN: US 6-497620
- Assignee:
- Massachusetts Inst. of Tech., Cambridge, MA (United States)
- DOE Contract Number:
- AC02-82ER13019
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 24 May 1983
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; FILMS; FABRICATION; RECRYSTALLIZATION; GRAIN ORIENTATION; GRAIN SIZE; MICROSTRUCTURE; ORIENTATION; SIZE; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture; 360102 - Metals & Alloys- Structure & Phase Studies; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360602 - Other Materials- Structure & Phase Studies
Citation Formats
Smith, H I, Atwater, H A, and Geis, M W. Thick crystalline films on foreign substrates. United States: N. p., 1986.
Web.
Smith, H I, Atwater, H A, & Geis, M W. Thick crystalline films on foreign substrates. United States.
Smith, H I, Atwater, H A, and Geis, M W. Tue .
"Thick crystalline films on foreign substrates". United States.
@article{osti_7249375,
title = {Thick crystalline films on foreign substrates},
author = {Smith, H I and Atwater, H A and Geis, M W},
abstractNote = {To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {3}
}
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