Orientation filtering for crystalline films
Abstract
A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations. 7 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7249303
- Patent Number(s):
- 4632723
- Application Number:
- PPN: US 6-481096
- Assignee:
- Massachusetts Inst. of Tech., Cambridge, MA (United States)
- DOE Contract Number:
- AC02-80ER13019
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 31 Mar 1983
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; FILMS; RECRYSTALLIZATION; GRAIN ORIENTATION; SUBSTRATES; VOIDS; MICROSTRUCTURE; ORIENTATION; 360102* - Metals & Alloys- Structure & Phase Studies; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360602 - Other Materials- Structure & Phase Studies
Citation Formats
Smith, H I, Atwater, H A, Thompson, C V, and Geis, M W. Orientation filtering for crystalline films. United States: N. p., 1986.
Web.
Smith, H I, Atwater, H A, Thompson, C V, & Geis, M W. Orientation filtering for crystalline films. United States.
Smith, H I, Atwater, H A, Thompson, C V, and Geis, M W. Tue .
"Orientation filtering for crystalline films". United States.
@article{osti_7249303,
title = {Orientation filtering for crystalline films},
author = {Smith, H I and Atwater, H A and Thompson, C V and Geis, M W},
abstractNote = {A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {12}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.