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Title: Transparent electrical conducting films by activated reactive evaporation

Abstract

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment. 1 fig.

Inventors:
;
Issue Date:
Research Org.:
Monosolar Inc
OSTI Identifier:
7248431
Patent Number(s):
4336277 A
Application Number:
PPN: US 6-191407
Assignee:
Univ. of California, Berkeley, CA (United States) CHO; EDB-94-124257
DOE Contract Number:  
AC04-79ET23008
Resource Type:
Patent
Resource Relation:
Patent File Date: 29 Sep 1980
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM OXIDES; PHYSICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTORS; THIN FILMS; CHALCOGENIDES; DEPOSITION; ELECTRICAL PROPERTIES; FILMS; INDIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SURFACE COATING; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Bunshah, R., and Nath, P. Transparent electrical conducting films by activated reactive evaporation. United States: N. p., 1982. Web.
Bunshah, R., & Nath, P. Transparent electrical conducting films by activated reactive evaporation. United States.
Bunshah, R., and Nath, P. Tue . "Transparent electrical conducting films by activated reactive evaporation". United States.
@article{osti_7248431,
title = {Transparent electrical conducting films by activated reactive evaporation},
author = {Bunshah, R. and Nath, P.},
abstractNote = {Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {6}
}