Process for growing silicon carbide whiskers by undercooling
Abstract
A method of growing silicon carbide whiskers, especially in the [beta] form, is disclosed using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection. 3 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7248426
- Patent Number(s):
- 4702901 A
- Application Number:
- PPN: US 6-839302
- Assignee:
- Dept. of Energy, Washington, DC (United States) PTO; EDB-94-124260
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12 Mar 1986
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON CARBIDES; CRYSTAL GROWTH; WHISKERS; COOLING; NUCLEATION; CARBIDES; CARBON COMPOUNDS; CRYSTALS; MONOCRYSTALS; SILICON COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Shalek, P.D. Process for growing silicon carbide whiskers by undercooling. United States: N. p., 1987.
Web.
Shalek, P.D. Process for growing silicon carbide whiskers by undercooling. United States.
Shalek, P.D. Tue .
"Process for growing silicon carbide whiskers by undercooling". United States.
@article{osti_7248426,
title = {Process for growing silicon carbide whiskers by undercooling},
author = {Shalek, P.D.},
abstractNote = {A method of growing silicon carbide whiskers, especially in the [beta] form, is disclosed using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {10}
}
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