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Title: Method of using polysilane positive photoresist materials

Abstract

New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.

Inventors:
;
Issue Date:
OSTI Identifier:
7245320
Patent Number(s):
4587205
Application Number:
PPN: US 6-676148
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 29 Nov 1984
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SEMICONDUCTOR MATERIALS; MASKING; SILANES; DEPOLYMERIZATION; PHOTOLYSIS; CHEMICAL COMPOSITION; MOLECULAR STRUCTURE; CHEMICAL REACTIONS; DECOMPOSITION; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOCHEMICAL REACTIONS; SILICON COMPOUNDS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-); 400500 - Photochemistry

Citation Formats

Harrah, L A, and Zeigler, J M. Method of using polysilane positive photoresist materials. United States: N. p., 1986. Web.
Harrah, L A, & Zeigler, J M. Method of using polysilane positive photoresist materials. United States.
Harrah, L A, and Zeigler, J M. Tue . "Method of using polysilane positive photoresist materials". United States.
@article{osti_7245320,
title = {Method of using polysilane positive photoresist materials},
author = {Harrah, L A and Zeigler, J M},
abstractNote = {New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {5}
}