Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
Abstract
Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7233744
- Patent Number(s):
- 5171610
- Application Number:
- PPN: US 7-574204
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 28 Aug 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALLOYS; CHEMICAL VAPOR DEPOSITION; OXIDES; PHOTOCHEMICAL REACTIONS; PHOTOLYSIS; VISIBLE RADIATION; CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; DECOMPOSITION; DEPOSITION; ELECTROMAGNETIC RADIATION; OXYGEN COMPOUNDS; RADIATIONS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Liu, D K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States: N. p., 1992.
Web.
Liu, D K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States.
Liu, D K. Tue .
"Low temperature photochemical vapor deposition of alloy and mixed metal oxide films". United States.
@article{osti_7233744,
title = {Low temperature photochemical vapor deposition of alloy and mixed metal oxide films},
author = {Liu, D K},
abstractNote = {Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 1992},
month = {Tue Dec 15 00:00:00 EST 1992}
}