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Title: Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

Abstract

Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

Inventors:
Issue Date:
OSTI Identifier:
7233744
Patent Number(s):
5171610 A
Application Number:
PPN: US 7-574204
Assignee:
Univ. of California, Oakland, CA (United States) PTO; EDB-94-088876
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 28 Aug 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; CHEMICAL VAPOR DEPOSITION; OXIDES; PHOTOCHEMICAL REACTIONS; PHOTOLYSIS; VISIBLE RADIATION; CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; DECOMPOSITION; DEPOSITION; ELECTROMAGNETIC RADIATION; OXYGEN COMPOUNDS; RADIATIONS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Liu, D.K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States: N. p., 1992. Web.
Liu, D.K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States.
Liu, D.K. Tue . "Low temperature photochemical vapor deposition of alloy and mixed metal oxide films". United States.
@article{osti_7233744,
title = {Low temperature photochemical vapor deposition of alloy and mixed metal oxide films},
author = {Liu, D.K.},
abstractNote = {Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {12}
}