Tunnel junction multiple wavelength light-emitting diodes

Title: Tunnel junction multiple wavelength light-emitting diodes

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Abstract

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Inventors:: Olson, J M; Kurtz, S R

Issue Date:: 1992-11-24

OSTI Identifier:: 7232717

Patent Number(s):: 5166761

Application Number:: PPN: US 7-678230

Assignee:: Midwest Research Inst., Kansas City, MO (United States)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Resource Relation:: Patent File Date: 1 Apr 1991

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; LIGHT EMITTING DIODES; WAVELENGTHS; FREQUENCY CONTROL; FREQUENCY DEPENDENCE; LIGHT SOURCES; CONTROL; RADIATION SOURCES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

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                    Olson, J M, and Kurtz, S R. Tunnel junction multiple wavelength light-emitting diodes.  United States: N. p., 1992. 
        Web.

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                    Olson, J M, & Kurtz, S R. Tunnel junction multiple wavelength light-emitting diodes.  United States.

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                    Olson, J M, and Kurtz, S R. Tue .  
        "Tunnel junction multiple wavelength light-emitting diodes".  United States.

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@article{osti_7232717,

  title        = {Tunnel junction multiple wavelength light-emitting diodes},

  author       = {Olson, J M and Kurtz, S R},

  abstractNote = {A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1992},

  month        = {11}

}

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