Polysilicon photoconductor for integrated circuits
Abstract
A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7165181
- Patent Number(s):
- 4821091
- Application Number:
- PPN: US 7-147130
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 21 Jan 1988
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; INTEGRATED CIRCUITS; PHOTOCONDUCTORS; FABRICATION; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; RESPONSE FUNCTIONS; CHEMICAL COATING; DEPOSITION; ELECTRONIC CIRCUITS; FUNCTIONS; MICROELECTRONIC CIRCUITS; SURFACE COATING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Hammond, R B, and Bowman, D R. Polysilicon photoconductor for integrated circuits. United States: N. p., 1989.
Web.
Hammond, R B, & Bowman, D R. Polysilicon photoconductor for integrated circuits. United States.
Hammond, R B, and Bowman, D R. Tue .
"Polysilicon photoconductor for integrated circuits". United States.
@article{osti_7165181,
title = {Polysilicon photoconductor for integrated circuits},
author = {Hammond, R B and Bowman, D R},
abstractNote = {A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {4}
}
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