Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Phillips, J E; Lasswell, P G

Title: Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

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Abstract

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

Inventors:: Phillips, J E; Lasswell, P G

Issue Date:: 1987-02-03

OSTI Identifier:: 7157562

Patent Number(s):: 4640002

Application Number:: PPN: US 6-805435

Assignee:: Univ. of Delaware, Newark, DE (United States)

DOE Contract Number:: EG-77-C-01-4042

Resource Type:: Patent

Resource Relation:: Patent File Date: 5 Dec 1985

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; FABRICATION; DEFECTS; DETECTION; MONITORING; RELIABILITY; REMOVAL; SEMICONDUCTOR MATERIALS; DIRECT ENERGY CONVERTERS; MATERIALS; PHOTOELECTRIC CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

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                    Phillips, J E, and Lasswell, P G. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices.  United States: N. p., 1987. 
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                    Phillips, J E, & Lasswell, P G. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices.  United States.

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                    Phillips, J E, and Lasswell, P G. Tue .  
        "Method and apparatus for increasing the durability and yield of thin film photovoltaic devices".  United States.

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@article{osti_7157562,

  title        = {Method and apparatus for increasing the durability and yield of thin film photovoltaic devices},

  author       = {Phillips, J E and Lasswell, P G},

  abstractNote = {Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1987},

  month        = {2}

}

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