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Title: Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

Abstract

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

Inventors:
;
Issue Date:
Research Org.:
RCA Corp
OSTI Identifier:
7157537
Patent Number(s):
4322253 A
Application Number:
PPN: US 6-145239
Assignee:
RCA Corp., New York, NY (United States) OAK; EDB-94-122122
DOE Contract Number:  
AC03-78ET21074
Resource Type:
Patent
Resource Relation:
Patent File Date: 30 Apr 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; AMORPHOUS STATE; ANNEALING; HYDROGEN; LASER RADIATION; RECRYSTALLIZATION; SEMICONDUCTOR DEVICES; SILICON; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; NONMETALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Pankove, J.I., and Wu, C.P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States: N. p., 1982. Web.
Pankove, J.I., & Wu, C.P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States.
Pankove, J.I., and Wu, C.P. Tue . "Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment". United States.
@article{osti_7157537,
title = {Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment},
author = {Pankove, J.I. and Wu, C.P.},
abstractNote = {A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {3}
}