Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
Abstract
A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- RCA Corp
- OSTI Identifier:
- 7157537
- Patent Number(s):
- 4322253
- Application Number:
- PPN: US 6-145239
- Assignee:
- RCA Corp., New York, NY (United States)
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 30 Apr 1980
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; AMORPHOUS STATE; ANNEALING; HYDROGEN; LASER RADIATION; RECRYSTALLIZATION; SEMICONDUCTOR DEVICES; SILICON; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; NONMETALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Pankove, J I, and Wu, C P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States: N. p., 1982.
Web.
Pankove, J I, & Wu, C P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States.
Pankove, J I, and Wu, C P. Tue .
"Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment". United States.
@article{osti_7157537,
title = {Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment},
author = {Pankove, J I and Wu, C P},
abstractNote = {A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 30 00:00:00 EST 1982},
month = {Tue Mar 30 00:00:00 EST 1982}
}
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