Chemoresistive gas sensor
Abstract
A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7148120
- Patent Number(s):
- 4674320
- Application Number:
- PPN: US 6-781543
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 30 Sep 1985
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; GASES; QUANTITATIVE CHEMICAL ANALYSIS; MEASURING INSTRUMENTS; DESIGN; OPERATION; ORGANIC SEMICONDUCTORS; SORPTION; SORPTIVE PROPERTIES; CHEMICAL ANALYSIS; FLUIDS; MATERIALS; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; 400102* - Chemical & Spectral Procedures
Citation Formats
Hirschfeld, T B. Chemoresistive gas sensor. United States: N. p., 1987.
Web.
Hirschfeld, T B. Chemoresistive gas sensor. United States.
Hirschfeld, T B. Tue .
"Chemoresistive gas sensor". United States.
@article{osti_7148120,
title = {Chemoresistive gas sensor},
author = {Hirschfeld, T B},
abstractNote = {A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {6}
}
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