Acoustic resonator and method of making same
Abstract
A method is disclosed of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers. 4 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7146617
- Patent Number(s):
- 4502932
- Application Number:
- PPN: US 6-541608
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-82
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 13 Oct 1983
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; RESONATORS; FABRICATION; ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; COMPOSITE MATERIALS; GALLIUM ARSENIDES; SOUND WAVES; ALLOYS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Kline, G R, and Lakin, K M. Acoustic resonator and method of making same. United States: N. p., 1985.
Web.
Kline, G R, & Lakin, K M. Acoustic resonator and method of making same. United States.
Kline, G R, and Lakin, K M. Tue .
"Acoustic resonator and method of making same". United States.
@article{osti_7146617,
title = {Acoustic resonator and method of making same},
author = {Kline, G R and Lakin, K M},
abstractNote = {A method is disclosed of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {3}
}