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Title: Amorphous silicon radiation detectors

Abstract

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Inventors:
; ;
Issue Date:
OSTI Identifier:
7117776
Patent Number(s):
5164809 A
Application Number:
PPN: US 7-342233
Assignee:
Univ. of California, Oakland, CA (United States) PTO; EDB-94-090370
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 Apr 1989
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; DESIGN; AMORPHOUS STATE; CHARGED PARTICLE DETECTION; GAMMA DETECTION; SIGNAL-TO-NOISE RATIO; VISIBLE RADIATION; X-RAY DETECTION; DETECTION; ELECTROMAGNETIC RADIATION; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

Citation Formats

Street, R.A., Perez-Mendez, V., and Kaplan, S.N. Amorphous silicon radiation detectors. United States: N. p., 1992. Web.
Street, R.A., Perez-Mendez, V., & Kaplan, S.N. Amorphous silicon radiation detectors. United States.
Street, R.A., Perez-Mendez, V., and Kaplan, S.N. Tue . "Amorphous silicon radiation detectors". United States.
@article{osti_7117776,
title = {Amorphous silicon radiation detectors},
author = {Street, R.A. and Perez-Mendez, V. and Kaplan, S.N.},
abstractNote = {Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {11}
}