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Title: Heterojunction solar cell with passivated emitter surface

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.
Inventors:
;
Issue Date:
OSTI Identifier:
7111066
Assignee:
Midwest Research Inst., Kansas City, MO (United States) PTO; EDB-94-099126
Patent Number(s):
US 5316593; A
Application Number:
PPN: US 7-977109
Contract Number:
AC02-83CH10093
Resource Relation:
Patent File Date: 16 Nov 1992
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GALLIUM PHOSPHIDE SOLAR CELLS; ENERGY EFFICIENCY; INDIUM PHOSPHIDE SOLAR CELLS; ANTIREFLECTION COATINGS; DESIGN; COATINGS; DIRECT ENERGY CONVERTERS; EFFICIENCY; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion