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Title: Heterojunction solar cell

Abstract

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Inventors:
Issue Date:
OSTI Identifier:
7109968
Patent Number(s):
5342453
Application Number:
PPN: US 7-976191
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 13 Nov 1992
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GALLIUM ARSENIDE SOLAR CELLS; DESIGN; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS; ANTIREFLECTION COATINGS; ENERGY EFFICIENCY; COATINGS; DIRECT ENERGY CONVERTERS; EFFICIENCY; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Olson, J M. Heterojunction solar cell. United States: N. p., 1994. Web.
Olson, J M. Heterojunction solar cell. United States.
Olson, J M. Tue . "Heterojunction solar cell". United States.
@article{osti_7109968,
title = {Heterojunction solar cell},
author = {Olson, J M},
abstractNote = {A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 30 00:00:00 EDT 1994},
month = {Tue Aug 30 00:00:00 EDT 1994}
}

Patent:
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