Heterojunction solar cell
Abstract
A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7109968
- Patent Number(s):
- 5342453
- Application Number:
- PPN: US 7-976191
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 13 Nov 1992
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; GALLIUM ARSENIDE SOLAR CELLS; DESIGN; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS; ANTIREFLECTION COATINGS; ENERGY EFFICIENCY; COATINGS; DIRECT ENERGY CONVERTERS; EFFICIENCY; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Olson, J M. Heterojunction solar cell. United States: N. p., 1994.
Web.
Olson, J M. Heterojunction solar cell. United States.
Olson, J M. Tue .
"Heterojunction solar cell". United States.
@article{osti_7109968,
title = {Heterojunction solar cell},
author = {Olson, J M},
abstractNote = {A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {8}
}
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