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Title: Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

Abstract

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

Inventors:
Issue Date:
OSTI Identifier:
7106736
Patent Number(s):
5319659 A
Application Number:
PPN: US 7-883315
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 14 May 1992
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LASER RADIATION; BEAM SHAPING; SEMICONDUCTOR LASERS; DESIGN; FABRICATION; LASER CAVITIES; ELECTROMAGNETIC RADIATION; LASERS; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Hohimer, J P. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching. United States: N. p., 1994. Web.
Hohimer, J P. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching. United States.
Hohimer, J P. Tue . "Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching". United States.
@article{osti_7106736,
title = {Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching},
author = {Hohimer, J P},
abstractNote = {A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {6}
}