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Title: Method of preparing high-temperature-stable thin-film resistors

Abstract

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Inventors:
Issue Date:
OSTI Identifier:
7098025
Patent Number(s):
-US-A206409
Application Number:
ON: DE83002348
Assignee:
Dept. of Energy DOEEEGTP; ERA-08-004845; EDB-83-003821
DOE Contract Number:  
AS04-76ET28355
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
15 GEOTHERMAL ENERGY; RESISTORS; FABRICATION; SILICON; CHEMICAL VAPOR DEPOSITION; TUNGSTEN; ELECTRIC CONDUCTIVITY; ELECTRONIC CIRCUITS; GEOTHERMAL WELLS; MANUFACTURING; SILICIDES; WELL LOGGING EQUIPMENT; CHEMICAL COATING; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; METALS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENTS; WELLS; Geothermal Legacy; 150303* - Geothermal Exploration & Exploration Technology- Exploratory Drilling & Well Logging

Citation Formats

Raymond, L.S. Method of preparing high-temperature-stable thin-film resistors. United States: N. p., 1980. Web.
Raymond, L.S. Method of preparing high-temperature-stable thin-film resistors. United States.
Raymond, L.S. Wed . "Method of preparing high-temperature-stable thin-film resistors". United States. https://www.osti.gov/servlets/purl/7098025.
@article{osti_7098025,
title = {Method of preparing high-temperature-stable thin-film resistors},
author = {Raymond, L.S.},
abstractNote = {A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {11}
}