Method of preparing high-temperature-stable thin-film resistors
Abstract
A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7098025
- Patent Number(s):
- 206409
- Application Number:
- ON: DE83002348
- Assignee:
- Dept. of Energy
- Patent Classifications (CPCs):
-
A - HUMAN NECESSITIES A01 - AGRICULTURE A01B - SOIL WORKING IN AGRICULTURE OR FORESTRY
- DOE Contract Number:
- AS04-76ET28355
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 15 GEOTHERMAL ENERGY; RESISTORS; FABRICATION; SILICON; CHEMICAL VAPOR DEPOSITION; TUNGSTEN; ELECTRIC CONDUCTIVITY; ELECTRONIC CIRCUITS; GEOTHERMAL WELLS; MANUFACTURING; SILICIDES; WELL LOGGING EQUIPMENT; CHEMICAL COATING; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; METALS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENTS; WELLS; Geothermal Legacy; 150303* - Geothermal Exploration & Exploration Technology- Exploratory Drilling & Well Logging
Citation Formats
Raymond, L S. Method of preparing high-temperature-stable thin-film resistors. United States: N. p., 1980.
Web.
Raymond, L S. Method of preparing high-temperature-stable thin-film resistors. United States.
Raymond, L S. Wed .
"Method of preparing high-temperature-stable thin-film resistors". United States. https://www.osti.gov/servlets/purl/7098025.
@article{osti_7098025,
title = {Method of preparing high-temperature-stable thin-film resistors},
author = {Raymond, L S},
abstractNote = {A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Nov 12 00:00:00 EST 1980},
month = {Wed Nov 12 00:00:00 EST 1980}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.