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Title: Stand-off transmission lines and method for making same

Abstract

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress. 16 figures.

Inventors:
Issue Date:
OSTI Identifier:
7083858
Patent Number(s):
5017509 A
Application Number:
PPN: US 7-555814
Assignee:
University of California, Oakland, CA (United States) PTO; EDB-94-111356
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 18 Jul 1990
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; DATA TRANSMISSION; FABRICATION; DIELECTRIC MATERIALS; ETCHING; REMOVAL; COMMUNICATIONS; ELECTRONIC CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS; SURFACE FINISHING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Tuckerman, D.B. Stand-off transmission lines and method for making same. United States: N. p., 1991. Web.
Tuckerman, D.B. Stand-off transmission lines and method for making same. United States.
Tuckerman, D.B. Tue . "Stand-off transmission lines and method for making same". United States.
@article{osti_7083858,
title = {Stand-off transmission lines and method for making same},
author = {Tuckerman, D.B.},
abstractNote = {Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress. 16 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {5}
}