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Title: X-ray lithography source

Abstract

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

Inventors:
; ;
Issue Date:
Research Org.:
Adelphia Technology Inc
OSTI Identifier:
7083850
Patent Number(s):
5077774
Application Number:
PPN: US 7-570210
Assignee:
Adelphi Technology Inc., Palo Alto, CA (United States)
DOE Contract Number:  
AC03-85ER80234
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 Aug 1990
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; FABRICATION; X-RAY SOURCES; DESIGN; BEAM OPTICS; ELECTRON BEAMS; SOFT X RADIATION; TRANSITION RADIATION; BEAMS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; EQUIPMENT; IONIZING RADIATIONS; LEPTON BEAMS; MICROELECTRONIC CIRCUITS; PARTICLE BEAMS; RADIATION SOURCES; RADIATIONS; X RADIATION; X-RAY EQUIPMENT; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Piestrup, M A, Boyers, D G, and Pincus, C. X-ray lithography source. United States: N. p., 1991. Web.
Piestrup, M A, Boyers, D G, & Pincus, C. X-ray lithography source. United States.
Piestrup, M A, Boyers, D G, and Pincus, C. Tue . "X-ray lithography source". United States.
@article{osti_7083850,
title = {X-ray lithography source},
author = {Piestrup, M A and Boyers, D G and Pincus, C},
abstractNote = {A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {12}
}