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Title: SLS complementary logic devices with increase carrier mobility

Abstract

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated. 5 figures.

Inventors:
; ;
Issue Date:
OSTI Identifier:
7083838
Patent Number(s):
5031007
Application Number:
PPN: US 7-604399
Assignee:
Sandia Corporation, Albuquerque, NM (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 26 Oct 1990
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LOGIC CIRCUITS; DESIGN; CARRIER MOBILITY; HOLES; PERFORMANCE; SEMICONDUCTOR MATERIALS; SUPERLATTICES; ELECTRONIC CIRCUITS; MATERIALS; MOBILITY; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Chaffin, R J, Osbourn, G C, and Zipperian, T E. SLS complementary logic devices with increase carrier mobility. United States: N. p., 1991. Web.
Chaffin, R J, Osbourn, G C, & Zipperian, T E. SLS complementary logic devices with increase carrier mobility. United States.
Chaffin, R J, Osbourn, G C, and Zipperian, T E. Tue . "SLS complementary logic devices with increase carrier mobility". United States.
@article{osti_7083838,
title = {SLS complementary logic devices with increase carrier mobility},
author = {Chaffin, R J and Osbourn, G C and Zipperian, T E},
abstractNote = {In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {7}
}

Patent:
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